rev 1 .0 1 h - 4 0 - 2 n - & p - channel enhancement mode field effect transistor PB502CW pdfn 2x2s halogen - free & lead - free niko - sem 100% uis tested 100% rg tested features ? pb?free, halogen free and rohs compliant. ? low r ds(on) to minimize conduction losses. ? ohmic region good r ds(on) ratio. ? optimized gate charge to minimize switching losses. applications ? protection circuits application s. ? logic/load switch circuits applications. ? dc motor for bldc applications. absolute maximum ratings (t a = 25 c unless otherwise noted) parameters/test conditions symbol n - channel p - channel units drain - source voltage v d s 20 - 20 v gate - source voltage v gs 8 8 v continuous drain current t a = 25 c i d 6 - 3.8 a t a = 7 0 c 4.8 - 3 pulsed drain current 1 i dm 20 - 15 power dissipation 3 t a = 25 c p d 1.9 1.9 w t a = 7 0 c 1.2 1.2 junction & storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings thermal resistance symbol typical maximum units junction - to - ambient 2 t Q 10 s r ? ja n - ch 63 c / w p - ch 63 junction - to - ambient 2 steady - state n - ch 97 p - ch 97 1 pulse width limited by maximum junction temperature. 2 the value of r ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c . 3 the power dissipation is based on r ? ja t Q 10 s value . product summary v (br)dss r ds(on) i d n - channel 20v 30 m 6 a p - channel - 20v 75 m - 3.8 a 1 : s1. 4 : s2. 2 : g1. 5 : g2. 3 : d2. 6 : d1.
rev 1 .0 2 h - 4 0 - 2 n - & p - channel enhancement mode field effect transistor PB502CW pdfn 2x2s halogen - free & lead - free niko - sem electrical characteristics (t j = 25 c, unless otherwise not ed) parameter symbol test conditions limits unit min typ max static drain - source breakdown voltage v (br)dss v gs = 0v, i d = 250 ? gs = 0v, i d = - 250 ? gs(th) v ds = v gs , i d = 250 ? ds = v gs , i d = - 250 ? gss v ds = 0v, v gs = 8 v n - ch p - ch 100 100 na v ds = 0v, v gs = 8 v zero gate voltage drain current i dss v ds = 16 v, v gs = 0v n - ch p - ch 1 - 1 ? ds = - 16 v, v gs = 0v v ds = 1 0 v, v gs = 0v, t j = 55 c n - ch p - ch 10 - 10 v ds = - 1 0 v, v gs = 0v, t j = 55 c drain - source on - state resistance 1 r ds(on) v gs = 4.5v, i d = 5 a n - ch p - ch 25 60 30 75 m gs = - 4.5v, i d = - 2.5 a v gs = 2.5 v, i d = 4.5 a n - ch p - ch 29 73 38 90 v gs = - 2.5 v, i d = - 2 a v gs = 1.8 v, i d = 2 a n - ch p - ch 36 91 55 125 v gs = - 1.8 v, i d = - 1 a forward transconductance 1 g fs v ds = 10v, i d = 5 a n - ch p - ch 26 10 s v ds = - 10v, i d = - 2.5 a dynamic input capacitance c iss n - chan nel v gs = 0v, v ds = 10 v, f = 1mhz p - channel v gs = 0v, v ds = - 1 0 v, f = 1mhz n - ch p - ch 510 588 pf output capacitance c oss n - ch p - ch 83 82 reverse transfer capacitance c rss n - ch p - ch 67 61 gate resistance r g v gs = 0 v, v ds = 0v, f = 1mhz n - c h p - ch 1.9 7.4
rev 1 .0 3 h - 4 0 - 2 n - & p - channel enhancement mode field effect transistor PB502CW pdfn 2x2s halogen - free & lead - free niko - sem total gate charge 2 q g n - channel v ds = 1 0 v , v gs = 4.5 v, i d = 5 a p - channel v ds = - 1 0 v , v gs = - 4.5 v, i d = - 2.5 a n - ch p - ch 7.3 7.3 nc gate - source charge 2 q gs n - ch p - ch 0.6 0.7 gate - drain charge 2 q gd n - ch p - ch 2.5 1.9 turn - on delay time 2 t d(on) n - channel v ds = 1 0 v , i d ? gs = 4.5 v, r gen = 6 ds = - 1 0 v, i d ? gs = - 4.5 v, r gen = 6 2 t r n - ch p - ch 94 33 turn - off delay time 2 t d(off) n - ch p - ch 26 43 f all time 2 t f n - ch p - ch 69 54 source - drain diode ratings and characteristics (t j = 25 c) continuous current i s n - ch p - ch 1.9 - 1.6 a forward voltage 1 v sd i f = 5 a , v gs = 0v n - ch p - ch 1 - 1.2 v i f = - 2.5 a , v gs = 0v reverse rec overy time t rr i f = 5 a, dl f /dt = 100a / ? f = - 2.5 a, dl f /dt = 100a / ? rr n - ch p - ch 3 3 n c 1 pulse test : pulse width ? 300 ? s ec, duty cycle ? 2 % . 2 independent of operating temperature.
rev 1 .0 4 h - 4 0 - 2 n - & p - channel enhancement mode field effect transistor PB502CW pdfn 2x2s halogen - free & lead - free niko - sem output characteristics transfer characteristics v g s , gate - to - sourc e voltage(v) v d s , drain - to - source voltage(v) capacitance characteristic c , capacitance(pf) v d s , drain - to - source voltage(v) gate charge characteristics characteristics v gs , gate - to - source voltage(v) qg , total gate charge(nc) on - resistance vs drain - to - source current r ds(on) on - resistance(ohm) i d , drain - to - source current(a) on - resistance vs gate - to - source voltage r ds(on) on - resistance(ohm) v g s , gate - to - source voltage(v) 0 4 8 12 16 20 0 1 2 3 4 5 vgs=4.5v vgs=2.5v vgs=1.8v vgs=1.4v vgs=1.6v vgs=2v 0 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 vgs=4.5v vgs=2.5v 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 0.9 1.8 2.7 3.6 4.5 id=5a 25 t ypical performance characteristics n - channel i d , drain - to - source current(a) i d , drain - to - source current(a)
rev 1 .0 5 h - 4 0 - 2 n - & p - channel enhancement mode field effect transistor PB502CW pdfn 2x2s halogen - free & lead - free niko - sem 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 vgs=4.5v id=5a normalized drain to source on - resistance t j , junction temperature( ? c) source - drain diode forward voltage i s , source current(a) safe operating area single pulse maximum power dissipation single pulse time(s) v d s , drai n - to - source voltage(v) transient thermal response curve r(t) , normalized effective transient thermal resistance v sd , source - to - drain voltage(v) on - resistance vs temperature 25 150 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 single pulse r ja = 97 ? c/w ta = 25 ? c dc 100ms 10ms 1ms 0.01 0.1 1 10 100 0.1 1 10 100 note : 1.vgs = 4.5v 2.ta =25 ? c 3.r ja = 97 ? c/w 4.single pulse operation in this area is limited by rds(on) single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 notes 1.duty cycle, d= t1 / t2 2.rthja = 97 /w 3.tj - ta = p*rthja(t) 4.rthja(t) = r(t)*rthja i d , drain current(a) power(w) t 1 , square wave pulse duration[sec]
rev 1 .0 6 h - 4 0 - 2 n - & p - channel enhancement mode field effect transistor PB502CW pdfn 2x2s halogen - free & lead - free niko - sem output ch aracteristics transfer characteristics - i d , drain - to - source current(a) - v g s , gate - to - source voltage(v) - v d s , drain - to - source voltage(v) capacitance characteristic - v d s , drain - to - source voltage(v) gate charge characteristics characteristics qg , total g ate charge(nc) on - resistance vs drain - to - source current - i d , drain - to - source current(a) on - resistance vs gate - to - source voltage voltage - v g s , gate - to - source voltage(v) 0 3 6 9 12 15 0 1 2 3 4 5 6 vgs= - 4v vgs= - 3v vgs= - 2.5v vgs= - 2v vgs= - 1.8v vgs= - 1.6v vgs= - 1.3v 0 0.03 0.06 0.09 0.12 0.15 0 3 6 9 12 15 vgs= - 4.5v vgs= - 2.5v 0 0.08 0.16 0.24 0.32 0.4 0 0.9 1.8 2.7 3.6 4.5 id= - 2.5a 25 p - channel - i d , drain - to - source current(a) c , capacitance(pf) - v gs , gate - to - source voltage(v) r ds(on) on - resistance(ohm) r ds(on) on - resistance(ohm)
rev 1 .0 7 h - 4 0 - 2 n - & p - channel enhancement mode field effect transistor PB502CW pdfn 2x2s halogen - free & lead - free niko - sem normalized drain to source on - resistance t j , junction temperature( ? c) source - drain diode forward voltage safe operating area single pulse maximum power dissipation single pulse time(s) - v d s , drain - to - source voltage(v) transient thermal response curve r(t) , normalized effective tran sient thermal resistance t 1 , square wave pulse duration[sec] - v sd , source - to - drain voltage(v) on - resistance vs temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 vgs= - 4.5v id= - 2.5a 25 125 0 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 3 6 9 12 0.001 0.01 0.1 1 10 100 single pulse r ja = 97 ? c/w ta = 25 ? c dc 100ms 10ms 1ms 0.01 0.1 1 10 100 0.1 1 10 100 note : 1.vgs = - 4.5v 2.ta =25 ? c 3.r ja = 97 ? c/w 4.single pulse operation in this area is limited by rds(on) single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 notes 1.duty cycle, d= t1 / t2 2.rthja = 97 /w 3.tj - ta = p*rthja(t) 4.rthja(t) = r(t)*rthja - i s , source current(a) - i d , drain current(a) power(w)
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